| PartNumber | IRLR8259TRPBF | IRLR8259PBF |
| Description | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V |
| Id Continuous Drain Current | 57 A | 57 A |
| Rds On Drain Source Resistance | 10.6 mOhms | 12.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.9 V | 2.35 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 6.8 nC | 6.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 48 W | 48 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 55 S | 55 S |
| Fall Time | 8.9 ns | 8.9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 38 ns | 38 ns |
| Factory Pack Quantity | 2000 | 75 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 9.1 ns | 9.1 ns |
| Typical Turn On Delay Time | 8.4 ns | 8.4 ns |
| Part # Aliases | SP001573124 | SP001558980 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Channel Mode | - | Enhancement |
| Type | - | HEXFET Power MOSFET |