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| PartNumber | IRLR8729TRPBF | IRLR8729TRLPBF |
| Description | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 58 A | 58 A |
| Rds On Drain Source Resistance | 11.9 mOhms | 8.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.35 V | 2.35 V |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 10 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 55 W | 55 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 91 S | 91 S |
| Fall Time | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 47 ns | 47 ns |
| Factory Pack Quantity | 2000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Part # Aliases | SP001569082 | SP001552874 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLR8729TRPBF | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | |
| IRLR8729TRLPBF | MOSFET N-CH 30V 58A D-PAK | ||
| IRLR8729TRPBF | MOSFET N-CH 30V 58A DPAK | ||
Infineon / IR |
IRLR8729TRLPBF | MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl | |
| IRLR8729TRLPBF. | New and Original |