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| PartNumber | IXFA4N100Q | IXFA4N100P | IXFA4N100P-TRL |
| Description | MOSFET 4 Amps 1000V 2.8 Rds | MOSFET 4 Amps 1000V | MOSFET IXFA4N100P TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 4 A | 4 A | - |
| Rds On Drain Source Resistance | 3 Ohms | 3.3 Ohms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HyperFET | HiPerFET | - |
| Packaging | Tube | Tube | Reel |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.41 mm | 9.65 mm | - |
| Series | IXFA4N100 | IXFA4N100 | POLAR |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.65 mm | 10.41 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 18 ns | 50 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 36 ns | - |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | 37 ns | - |
| Typical Turn On Delay Time | 17 ns | 24 ns | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 6 V | - |
| Qg Gate Charge | - | 26 nC | - |
| Type | - | Polar HiPerFET Power MOSFET | - |
| Forward Transconductance Min | - | 1.8 S | - |