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| PartNumber | IXFH26N60P | IXFH26N60 | IXFH26N60Q |
| Description | MOSFET 600V 26A | MOSFET 600V 26A | |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 26 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 460 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH26N60 | - | IXFH26N60 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 26 S | - | - |
| Fall Time | 21 ns | - | 16 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | 32 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | 80 ns |
| Typical Turn On Delay Time | 25 ns | - | 30 ns |
| Unit Weight | 0.229281 oz | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 360 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 26 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 250 mOhms |
| Forward Transconductance Min | - | - | 22 S |