| PartNumber | IXFK180N10 | IXFK180N25T | IXFK180N07 |
| Description | MOSFET 100V 180A | MOSFET 180A 250V | MOSFET 180 Amps 70V 0.006 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 250 V | 70 V |
| Id Continuous Drain Current | 180 A | 180 A | 180 A |
| Rds On Drain Source Resistance | 8 mOhms | 12.9 mOhms | 6 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 560 W | 1.39 W | 560 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.16 mm | 26.16 mm | 26.16 mm |
| Length | 19.96 mm | 19.96 mm | 19.96 mm |
| Series | IXFK180N10 | IXFK180N25 | IXFK180N07 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.13 mm | 5.13 mm | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 90 S | 100 S | 90 S/55 S |
| Fall Time | 65 ns | 28 ns | 55 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 90 ns | 33 ns | 90 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 140 ns | 100 ns | 140 ns |
| Typical Turn On Delay Time | 50 ns | 37 ns | 65 ns |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Qg Gate Charge | - | 345 nC | - |
| Type | - | GigaMOS Power MOSFET | - |