| PartNumber | IXFK44N60 | IXFK44N50P | IXFK44N50Q |
| Description | MOSFET DIODE Id44 BVdass600 | MOSFET 500V 44A | MOSFET 44 Amps 500V 0.12 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
| Id Continuous Drain Current | 44 A | 44 A | 44 A |
| Rds On Drain Source Resistance | 130 mOhms | 140 mOhms | 120 mOhms |
| Vgs Gate Source Voltage | 20 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 560 W | 650 W | 500 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.16 mm | 26.16 mm | 26.16 mm |
| Length | 19.96 mm | 19.96 mm | 19.96 mm |
| Series | IXFK44N60 | IXFK44N50 | IXFK44N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.13 mm | 5.13 mm | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 45 S | 32 S | - |
| Fall Time | 40 ns | 27 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 50 ns | 29 ns | 22 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 85 ns | 75 ns |
| Typical Turn On Delay Time | 40 ns | 28 ns | 33 ns |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |