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| PartNumber | IXFN520N075T2 | IXFN50N120SIC | IXFN50N50 |
| Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 50 Amps 500V 0.1 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | - | Si |
| Mounting Style | Chassis Mount | - | Chassis Mount |
| Package / Case | SOT-227-4 | - | SOT-227-4 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | - | 500 V |
| Id Continuous Drain Current | 480 A | - | 50 A |
| Rds On Drain Source Resistance | 1.9 mOhms | - | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | 20 V |
| Qg Gate Charge | 545 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Pd Power Dissipation | 940 W | - | 600 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | 0 | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFN520N075 | - | IXFN50N50 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | TrenchT2 GigaMOS HiperFet | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 65 S | - | - |
| Fall Time | 35 ns | - | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 36 ns | - | 60 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | - | 120 ns |
| Typical Turn On Delay Time | 48 ns | - | 45 ns |
| Unit Weight | 1.058219 oz | - | 1.058219 oz |
| Height | - | - | 9.6 mm |
| Length | - | - | 38.23 mm |
| Width | - | - | 25.42 mm |