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| PartNumber | IXGR32N60B | IXGR32N170H1 | IXGR32N170AH1 |
| Description | IGBT Transistors 17 Amps 1700V 5.2 Rds | IGBT Transistors 17 Amps 1700V 5.2 Rds | |
| Manufacturer | - | IXYS | IXYS |
| Product Category | - | IGBTs - Single | IGBTs - Single |
| Series | - | IXGR32N170 | IXGR32N170 |
| Packaging | - | Bulk | Bulk |
| Unit Weight | - | 0.186952 oz | 0.186952 oz |
| Mounting Style | - | SMD/SMT | Through Hole |
| Package Case | - | ISOPLUS247 | ISOPLUS247 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | ISOPLUS247 | ISOPLUS247 |
| Configuration | - | Single | Single |
| Power Max | - | 200W | 200W |
| Reverse Recovery Time trr | - | 230ns | 230ns |
| Current Collector Ic Max | - | 38A | 26A |
| Voltage Collector Emitter Breakdown Max | - | 1700V | 1700V |
| IGBT Type | - | NPT | NPT |
| Current Collector Pulsed Icm | - | 200A | 200A |
| Vce on Max Vge Ic | - | 3.5V @ 15V, 21A | 5.2V @ 15V, 21A |
| Switching Energy | - | 10.6mJ (off) | 1.5mJ (off) |
| Gate Charge | - | 155nC | 155nC |
| Td on off 25°C | - | 45ns/270ns | 46ns/260ns |
| Test Condition | - | 1360V, 21A, 2.7 Ohm, 15V | 1360V, 21A, 2.7 Ohm, 15V |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Collector Emitter Voltage VCEO Max | - | 1.7 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | - | 3.5 V | 4.2 V |
| Continuous Collector Current at 25 C | - | 38 A | 26 A |
| Maximum Gate Emitter Voltage | - | +/- 20 V | +/- 20 V |
| Pd Power Dissipation | - | - | 200 W |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Continuous Collector Current Ic Max | - | - | 200 A |