| PartNumber | IXTH200N10T | IXTH20N50D | IXTH20N60 |
| Description | MOSFET 200 Amps 100V 5.4 Rds | MOSFET 20 Amps 500V 0.33 Rds | MOSFET 20 Amps 600V 0.35 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 500 V | 600 V |
| Id Continuous Drain Current | 200 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 5.5 mOhms | 330 mOhms | 350 mOhms |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 550 W | 400 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Depletion | Enhancement |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXTH200N10 | IXTH20N50 | IXTH20N60 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 34 ns | 75 ns | 40 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 31 ns | 85 ns | 43 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 110 ns | 70 ns |
| Typical Turn On Delay Time | 35 ns | 35 ns | 20 ns |
| Unit Weight | 0.229281 oz | 0.194007 oz | 0.229281 oz |
| Vgs Gate Source Voltage | - | 30 V | 20 V |
| Forward Transconductance Min | - | - | 18 S |