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| PartNumber | IXTH6N90A. | IXTH6N90A | IXTH6N90 |
| Description | MOSFET 6 Amps 900V 1.4 Rds | MOSFET 6 Amps 900V 1.8 Rds | |
| Manufacturer | - | IXYS | N/A |
| Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
| Series | - | IXTH6N90 | IXTH6N90 |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 6500 g | 6500 g |
| Mounting Style | - | Through Hole | Through Hole |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Package Case | - | TO-247-3 | TO-247-3 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 180 W | 180 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 60 ns | 60 ns |
| Rise Time | - | 40 ns | 40 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 6 A | 6 A |
| Vds Drain Source Breakdown Voltage | - | 900 V | 900 V |
| Rds On Drain Source Resistance | - | 1.4 Ohms | 1.8 Ohms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 100 ns | 100 ns |
| Typical Turn On Delay Time | - | 35 ns | 35 ns |
| Channel Mode | - | Enhancement | Enhancement |