 |  |  | |
| PartNumber | IXTN170P10P | IXTN17N120L | IXTN17N100L |
| Description | Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds | MOSFET 17 Amps 1200V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Type | Polar Power MOSFET | Linear Power MOSFET | - |
| Mounting Style | Screw Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | IXTN170P10 | IXTN17N120 | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | PolarP | Linear | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 1.2 kV | - |
| Id Continuous Drain Current | - | 15 A | - |
| Rds On Drain Source Resistance | - | 900 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 6 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 155 nC | - |
| Pd Power Dissipation | - | 540 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 12.22 mm | - |
| Length | - | 38.23 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 25.42 mm | - |
| Forward Transconductance Min | - | 3.5 S | - |
| Fall Time | - | 83 ns | - |
| Rise Time | - | 31 ns | - |
| Typical Turn Off Delay Time | - | 110 ns | - |
| Typical Turn On Delay Time | - | 42 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXTN170P10P | Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds | |
| IXTN17N120L | MOSFET 17 Amps 1200V | ||
| IXTN17N100L | New and Original | ||
| IXTN17N120L | MOSFET N-CH 1200V 15A SOT-227B | ||
| IXTN170P10P | Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds |