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| PartNumber | IXTN210P10T | IXTN21N100 | IXTN21N100L |
| Description | Discrete Semiconductor Modules TrenchP Channel Power MOSFETs | MOSFET 21 Amps 100V 0.55 Ohm Rds | 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Type | MOSFET | - | - |
| Mounting Style | Screw Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | IXTN210P10 | IXTN21N100 | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | TrenchP | - | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 1 kV | - |
| Id Continuous Drain Current | - | 21 A | - |
| Rds On Drain Source Resistance | - | 550 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Pd Power Dissipation | - | 520 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 25.42 mm | - |
| Forward Transconductance Min | - | 24 S | - |
| Fall Time | - | 40 ns | - |
| Rise Time | - | 50 ns | - |
| Typical Turn Off Delay Time | - | 100 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |