IXTT140N1

IXTT140N10P-TRL vs IXTT140N10P vs IXTT140N10PTRL

 
PartNumberIXTT140N10P-TRLIXTT140N10PIXTT140N10PTRL
DescriptionDiscrete Semiconductor Modules PolarHT Power MOSFETMOSFET 140 Amps 100V 0.011 Rds
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesMOSFET-
RoHSYY-
ProductPower MOSFET Modules--
TypePolarHTPolarHT Power MOSFET-
Vgs Gate Source Voltage20 V20 V-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268-3TO-268-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingReelTube-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-Channel-
Fall Time26 ns26 ns-
Id Continuous Drain Current140 A140 A-
Pd Power Dissipation600 W600 W-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance11 mOhms11 mOhms-
Rise Time50 ns50 ns-
Factory Pack Quantity40030-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
TradenamePolarHTPolarHT-
Typical Turn Off Delay Time85 ns85 ns-
Typical Turn On Delay Time35 ns35 ns-
Vds Drain Source Breakdown Voltage100 V100 V-
Vgs th Gate Source Threshold Voltage3 V5 V-
Technology-Si-
Number of Channels-1 Channel-
Qg Gate Charge-155 nC-
Channel Mode-Enhancement-
Height-5.1 mm-
Length-14 mm-
Series-IXTT140N10-
Transistor Type-1 N-Channel-
Width-16.05 mm-
Forward Transconductance Min-45 S-
Unit Weight-0.158733 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTT140N10P-TRL Discrete Semiconductor Modules PolarHT Power MOSFET
IXTT140N10P MOSFET 140 Amps 100V 0.011 Rds
IXTT140N10PTRL New and Original
IXTT140N10P IGBT Transistors MOSFET 140 Amps 100V 0.011 Rds
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