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| PartNumber | IXXA30N65C3HV | IXXA50N60B3 | IXXA26000HBB |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Packaging | Tube | - | - |
| Brand | IXYS | IXYS | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | XPT, GenX3 | - | - |
| Package / Case | - | TO-263-3 | - |
| Mounting Style | - | SMD/SMT | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Emitter Saturation Voltage | - | 1.55 V | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Continuous Collector Current at 25 C | - | 120 A | - |
| Pd Power Dissipation | - | 600 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Continuous Collector Current Ic Max | - | 200 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |