IXXH40N65

IXXH40N65B4D1 vs IXXH40N65B4 vs IXXH40N65B4H1

 
PartNumberIXXH40N65B4D1IXXH40N65B4IXXH40N65B4H1
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247ADIGBT Transistors 650V/120A TRENCH IGBT GENX4 XPTIGBT Transistors DISC IGBT XPT-GENX4
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
RoHSYYY
ProductPower MOSFET Modules--
TypeGenX4--
Vgs Gate Source Voltage20 V--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247AD-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTubeTube
ConfigurationSingleSingle-
BrandIXYSIXYSIXYS
Transistor PolarityN-Channel--
Fall Time46 ns--
Id Continuous Drain Current115 A--
Pd Power Dissipation455 W455 W-
Product TypeDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
Rise Time60 ns--
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesIGBTsIGBTs
TradenameXPTXPTXPT, GenX4
Typical Turn Off Delay Time115 ns--
Typical Turn On Delay Time20 ns--
Vds Drain Source Breakdown Voltage650 V--
Vgs th Gate Source Threshold Voltage4 V--
Technology-SiSi
Collector Emitter Voltage VCEO Max-650 V-
Collector Emitter Saturation Voltage-1.5 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-120 A-
Series-IXXH40N65Trench
Continuous Collector Current Ic Max-40 A-
Gate Emitter Leakage Current-100 nA-
Unit Weight-0.158733 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXXH40N65B4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65C4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65B4 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
IXXH40N65B4H1 IGBT Transistors DISC IGBT XPT-GENX4
IXXH40N65B4D1 IGBT
IXXH40N65B4H1 IGBT 650V 120A 455W TO247AD
IXXH40N65B4 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Top