IXXH80N65B4

IXXH80N65B4D1 vs IXXH80N65B4H1 vs IXXH80N65B4

 
PartNumberIXXH80N65B4D1IXXH80N65B4H1IXXH80N65B4
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247ADIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPTIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
RoHSYYY
ProductDiode Power Modules--
TypeGenX4--
Vgs Gate Source Voltage20 V--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247AD-3TO-247AD-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-Channel--
Fall Time53 ns--
Id Continuous Drain Current180 A--
Pd Power Dissipation625 W625 W625 W
Product TypeDiscrete Semiconductor ModulesIGBT TransistorsIGBT Transistors
Rise Time100 ns--
Factory Pack Quantity303030
SubcategoryDiscrete Semiconductor ModulesIGBTsIGBTs
TradenameXPTXPTXPT
Typical Turn Off Delay Time112 ns--
Typical Turn On Delay Time26 ns--
Vds Drain Source Breakdown Voltage650 V--
Vgs th Gate Source Threshold Voltage4 V--
Technology-SiSi
Collector Emitter Voltage VCEO Max-650 V650 V
Collector Emitter Saturation Voltage-1.65 V1.65 V
Maximum Gate Emitter Voltage-20 V20 V
Continuous Collector Current at 25 C-160 A160 A
Series-IXXH80N65IXXH80N65
Continuous Collector Current Ic Max-80 A80 A
Gate Emitter Leakage Current-100 nA100 nA
Unit Weight-0.158733 oz0.158733 oz
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXXH80N65B4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH80N65B4H1 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4D1 New and Original
IXXH80N65B4H1 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
IXXH80N65B4D1/SGL160N60U New and Original
IXXH80N65B4D1/SGL160N60UFD New and Original
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