 |  |  | |
| PartNumber | IXXN110N65C4H1 | IXXN100N60B3H1 | IXXN110N65B4H1 |
| Description | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | IGBT Transistors XPT 600V IGBT GenX3 w/Diode | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single Dual Emitter | - | Single |
| Collector Emitter Voltage VCEO Max | 650 V | - | 650 V |
| Collector Emitter Saturation Voltage | 1.98 V | - | 2.1 V |
| Continuous Collector Current at 25 C | 210 A | - | 215 A |
| Gate Emitter Leakage Current | 100 nA | - | 100 nA |
| Pd Power Dissipation | 750 W | - | 750 W |
| Package / Case | SOT-227B-4 | - | SOT-227 |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Packaging | Tube | Tube | Tube |
| Series | IXXN110N65 | Planar | IXXN110N65 |
| Brand | IXYS | IXYS | IXYS |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Maximum Gate Emitter Voltage | 20 V | - | 30 V |
| Product Type | IGBT Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT | XPT, GenX3 | XPT |
| Unit Weight | 1.058219 oz | 1 oz | 1.058219 oz |
| Technology | - | Si | Si |
| Continuous Collector Current Ic Max | - | - | 110 A |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXXN110N65C4H1 | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | |
| IXXN100N60B3H1 | IGBT Transistors XPT 600V IGBT GenX3 w/Diode | ||
| IXXN110N65B4H1 | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | ||
| IXXN100N60B3H1 | IGBT 600V 100A SOT-227B | ||
| IXXN110N65C4H1 | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | ||
| IXXN110N65B4H1 | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT |