 |  |  | |
| PartNumber | IXYH10N170C | IXYH10N170CV1 | IXYH10N450CHV |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | IGBT Transistors 1700V/10A XPT IGBT w/ Diode | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247AD-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 70 ns | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Pd Power Dissipation | 280 W | 280 W | - |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | - |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Tradename | XPT | - | - |
| Typical Turn Off Delay Time | 130 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1700 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Technology | - | Si | - |
| Collector Emitter Voltage VCEO Max | - | 1700 V | - |
| Collector Emitter Saturation Voltage | - | 4.1 V | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Continuous Collector Current at 25 C | - | 36 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXYH10N170C | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | |
| IXYH10N170CV1 | IGBT Transistors 1700V/10A XPT IGBT w/ Diode | ||
| IXYH10N170C | IGBT 1.7KV 36A TO247 | ||
| IXYH10N450CHV | New and Original | ||
| IXYH10N170CV1 | IGBT 1.7KV 36A TO247 |