KSD261CG stock, KSD261CG, KSD261CGTA


PartNumber	KSD261CGTA	KSD261CGBU
Description	Bipolar Transistors - BJT NPN Epitaxial Transistor	Bipolar Transistors - BJT NPN Epitaxial Sil
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3 Kinked Lead	TO-92-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	20 V	20 V
Collector Base Voltage VCBO	40 V	40 V
Emitter Base Voltage VEBO	5 V	5 V
Collector Emitter Saturation Voltage	0.18 V	0.18 V
Maximum DC Collector Current	0.5 A	0.5 A
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	KSD261	-
DC Current Gain hFE Max	400	400
Height	4.7 mm	4.58 mm
Length	4.7 mm	4.58 mm
Packaging	Ammo Pack	Bulk
Width	3.93 mm	3.86 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
DC Collector/Base Gain hfe Min	120	120
Pd Power Dissipation	500 mW	500 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	1000
Subcategory	Transistors	Transistors
Part # Aliases	KSD261CGTA_NL	-
Unit Weight	0.008466 oz	0.008466 oz

Search Part Number : "KSD261CG", Match & Start with "KSD261CG" - Total : 5

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	KSD261CGTA	Bipolar Transistors - BJT NPN Epitaxial Transistor
ON Semiconductor / Fairchild	KSD261CGBU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD261CGBU	TRANS NPN 20V 0.5A TO-92
ON Semiconductor	KSD261CGTA	TRANS NPN 20V 0.5A TO-92
	KSD261CGTA_Q	Bipolar Transistors - BJT NPN Epitaxial Transisto

KSD261CG