| PartNumber | MJE5731AG | MJE5730G | MJE5731G |
| Description | Bipolar Transistors - BJT BIP PNP 1A 375V | Bipolar Transistors - BJT 1A 300V 40W PNP | Bipolar Transistors - BJT 1A 350V 40W PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 375 V | 300 V | 350 V |
| Collector Base Voltage VCBO | 350 V | 300 V | 350 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Maximum DC Collector Current | 1 A | 1 A | 1 A |
| Gain Bandwidth Product fT | 10 MHz | 10 MHz | 10 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MJE5731A | MJE5730 | MJE5731 |
| Height | 15.75 mm | 15.75 mm | 15.75 mm |
| Length | 10.53 mm | 10.53 mm | 10.53 mm |
| Packaging | Tube | Tube | Tube |
| Width | 4.83 mm | 4.83 mm | 4.83 mm |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| DC Collector/Base Gain hfe Min | 30 | 30 | 30 |
| Pd Power Dissipation | 40000 mW | 40 W | 40 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Collector Emitter Saturation Voltage | - | 1 V | 1 V |
| Continuous Collector Current | - | 1 A | 1 A |