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MJL21195G

MJL21195G vs MJL21195G. vs MJL21195G/MJL21196G

 
PartNumberMJL21195GMJL21195G.MJL21195G/MJL21196G
DescriptionBipolar Transistors - BJT BIP PNP 16A 250V FG
ManufacturerON Semiconductor-ON
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-264-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max250 V--
Collector Base Voltage VCBO400 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current16 A-16 A
Gain Bandwidth Product fT4 MHz-4 MHz
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMJL21195-MJL21195
Height26.4 mm--
Length20.3 mm--
PackagingTube-Tube
Width5.3 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation200000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity25--
SubcategoryTransistors--
Unit Weight0.480008 oz--
Package Case--TO-264-3, TO-264AA
Mounting Type--Through Hole
Supplier Device Package--TO-264
Power Max--200W
Transistor Type--PNP
Current Collector Ic Max--16A
Voltage Collector Emitter Breakdown Max--250V
DC Current Gain hFE Min Ic Vce--25 @ 8A, 5V
Vce Saturation Max Ib Ic--4V @ 3.2A, 16A
Current Collector Cutoff Max--100μA
Frequency Transition--4MHz
Pd Power Dissipation--200000 mW
Collector Emitter Voltage VCEO Max--250 V
Collector Base Voltage VCBO--400 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--25
Manufacturer Part # Description RFQ
MJL21195G Bipolar Transistors - BJT BIP PNP 16A 250V FG
MJL21195G. New and Original
MJL21195G/MJL21196G New and Original
ON Semiconductor
ON Semiconductor 		MJL21195G Bipolar Transistors - BJT BIP PNP 16A 250V FG
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