MMBT2222AM stock, MMBT2222AM, MMBT2222AM3T5G


PartNumber	MMBT2222AM3T5G	MMBT2222AM
Description	Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR
Manufacturer	ON Semiconductor	ON
Product Category	Bipolar Transistors - BJT	Transistors (BJT) - Single
RoHS	Y	-
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SOT-723-3	-
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	40 V	-
Collector Base Voltage VCBO	75 V	-
Emitter Base Voltage VEBO	6 V	-
Maximum DC Collector Current	0.6 A	0.6 A
Gain Bandwidth Product fT	300 MHz	300 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	MMBT2222AM3	MMBT2222AM3
Height	0.5 mm	-
Length	1.2 mm	-
Packaging	Reel	Digi-ReelR Alternate Packaging
Width	0.8 mm	-
Brand	ON Semiconductor	-
Pd Power Dissipation	640 mW	-
Product Type	BJTs - Bipolar Transistors	-
Factory Pack Quantity	8000	-
Subcategory	Transistors	-
Unit Weight	0.000106 oz	-
Package Case	-	SOT-723
Mounting Type	-	Surface Mount
Supplier Device Package	-	SOT-723
Power Max	-	640mW
Transistor Type	-	NPN
Current Collector Ic Max	-	600mA
Voltage Collector Emitter Breakdown Max	-	40V
DC Current Gain hFE Min Ic Vce	-	100 @ 150mA, 10V
Vce Saturation Max Ib Ic	-	1V @ 50mA, 500mA
Current Collector Cutoff Max	-	10nA (ICBO)
Frequency Transition	-	300MHz
Pd Power Dissipation	-	640 mW
Collector Emitter Voltage VCEO Max	-	40 V
Collector Base Voltage VCBO	-	75 V
Emitter Base Voltage VEBO	-	6 V
DC Collector Base Gain hfe Min	-	35 at 0.1 mA at 10 V 50 at 1 mA at 10 V 75 at 10 mA at 10 V 100 at 150 mA at 10 V 50 at 150 mA at 1 V 40 at 500 mA at 10 V
DC Current Gain hFE Max	-	35 at 0.1 mA at 10 V

Search Part Number : "MMBT2222AM", Match & Start with "MMBT2222AM" - Total : 3

Manufacturer	Part #	Description
	MMBT2222AM3T5G	Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR
	MMBT2222AM	New and Original
ON Semiconductor	MMBT2222AM3T5G	Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR

MMBT2222AM