| PartNumber | MMDT5451-7-F | MMDT5551-7-F | MMDT5551-7 |
| Description | Bipolar Transistors - BJT 160 / 160V 200mW | Bipolar Transistors - BJT 160V 200mW | Bipolar Transistors - BJT 160V 200mW |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
| Transistor Polarity | PNP | NPN | NPN |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - 150 V | 160 V | 160 V |
| Collector Base Voltage VCBO | - 160 V | 180 V | 180 V |
| Emitter Base Voltage VEBO | - 5 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.2 V | 0.2 V | - |
| Maximum DC Collector Current | 0.2 A | 0.2 A | 0.2 A |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | 300 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMDT54 | MMDT55 | MMDT5551 |
| DC Current Gain hFE Max | 240 | 250 | 250 |
| Height | 1 mm | 1 mm | 1 mm |
| Length | 2.2 mm | 2.2 mm | 2.2 mm |
| Packaging | Reel | Reel | Reel |
| Width | 1.35 mm | 1.35 mm | 1.35 mm |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | - 0.2 A | 0.2 A | 0.2 A |
| DC Collector/Base Gain hfe Min | 60 | 80 | 80 |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000212 oz | 0.000212 oz | 0.000212 oz |