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| PartNumber | MMIX1X200N60B3H1 | MMIX1X200N60B3 | MMIX1X100N60B3H1 |
| Description | IGBT Transistors SMPD IGBTs Power Device | IGBT Transistors SMPD IGBTs Power Device | IGBT Transistors DISC IGBT SMPD PKG-STANDARD |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Technology | Si | Si | Si |
| Package / Case | SMDP-21 | SMDP-21 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Continuous Collector Current at 25 C | 175 A | 223 A | - |
| Pd Power Dissipation | 520 W | 625 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Series | MMIX1X200N60 | MMIX1X200N60 | - |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Gate Emitter Leakage Current | 200 nA | 200 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 20 | 20 | 20 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | - | Y |
| Tradename | - | - | XPT, GenX3 |