| PartNumber | MRF09030LR1 | MRF085HR5 | MRF085HR3 |
| Description | RF Bipolar Transistors RF Transistor | RF MOSFET Transistors High Ruggedness N--Channel | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. |
| Manufacturer | Advanced Semiconductor, Inc. | NXP | NXP |
| Product Category | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | Si | Si |
| Packaging | Tray | Reel | Reel |
| Type | RF Bipolar Power | RF Power MOSFET | RF Power MOSFET |
| Brand | Advanced Semiconductor, Inc. | NXP Semiconductors | NXP Semiconductors |
| Product Type | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Transistor Polarity | - | Dual N-Channel | Dual N-Channel |
| Id Continuous Drain Current | - | 210 mA | 210 mA |
| Vds Drain Source Breakdown Voltage | - | - 500 mV, 133 V | - 500 mV, 133 V |
| Gain | - | 25.6 dB | 25.6 dB |
| Output Power | - | 85 W | 85 W |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | NI-650H-4 | NI-650H-4 |
| Operating Frequency | - | 1.8 MHz to 1215 MHz | 1.8 MHz to 1215 MHz |
| Series | - | MRF085H | MRF085H |
| Number of Channels | - | 2 Channel | 2 Channel |
| Pd Power Dissipation | - | 235 W | 235 W |
| Factory Pack Quantity | - | 50 | 250 |
| Vgs Gate Source Voltage | - | - 6 V, 10 V | - 6 V, 10 V |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | 1.5 V |
| Part # Aliases | - | 935351494178 | 935351494128 |
| Unit Weight | - | 0 oz | 0 oz |