 |  | | |
| PartNumber | MRF101AN | MRF101AN-230MHZ | MRF101AN-27MHZ |
| Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | MRF100AN REFERENCE BRD - 233MHZ | MRF100AN REFERENCE BOARD - 27MHZ |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 8.8 A | - | - |
| Vds Drain Source Breakdown Voltage | 133 V | - | - |
| Gain | 21.1 dB | - | - |
| Output Power | 100 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Packaging | Tube | - | - |
| Operating Frequency | 1.8 MHz to 250 MHz | - | - |
| Series | MRF101 | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | NXP Semiconductors | - | - |
| Forward Transconductance Min | 7.1 S | - | - |
| Number of Channels | 1 Channel | - | - |
| Pd Power Dissipation | 182 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 6 V, + 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Part # Aliases | 935377233129 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
MRF101AN | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | |
| MRF101AN | RF TRANSISTOR 100W TO-220 | ||
| MRF101AN-230MHZ | MRF100AN REFERENCE BRD - 233MHZ | ||
| MRF101AN-27MHZ | MRF100AN REFERENCE BOARD - 27MHZ | ||
| MRF101AN-81MHZ | MRF100AN REFERENCE BOARD - 81MHZ |