 |  | | |
| PartNumber | MT3S113(TE85L,F) | MT3S113(TE85LF)CT-ND | MT3S113(TE85LF)DKR-ND |
| Description | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | MT3S113 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Collector Emitter Voltage VCEO Max | 5.3 V | - | - |
| Emitter Base Voltage VEBO | 0.6 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236-3 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 12.5 GHz | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
MT3S113(TE85L,F) | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW | |
| MT3S113(TE85LF)CT-ND | New and Original | ||
| MT3S113(TE85LF)DKR-ND | New and Original | ||
| MT3S113(TE85LF)TR-ND | New and Original |