MUN5130

MUN5130DW1T1G vs MUN5130DW1T1 vs MUN5130T1G

 
PartNumberMUN5130DW1T1GMUN5130DW1T1MUN5130T1G
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNPTRANS PREBIAS PNP 202MW SC70-3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor1 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-88-6--
DC Collector/Base Gain hfe Min3--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation250 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5130DW1--
PackagingReelTape & Reel (TR)-
DC Current Gain hFE Max3 at 5 mA at 10 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SC-88/SC70-6/SOT-363-
Power Max-250mW-
Transistor Type-2 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-1k-
Resistor Emitter Base R2 Ohms-1k-
DC Current Gain hFE Min Ic Vce-3 @ 5mA, 10V-
Vce Saturation Max Ib Ic-250mV @ 5mA, 10mA-
Current Collector Cutoff Max-500nA-
Frequency Transition---
Manufacturer Part # Description RFQ
MUN5130DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5130DW1T1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MUN5130T1G TRANS PREBIAS PNP 202MW SC70-3
ON Semiconductor
ON Semiconductor
MUN5130DW1T1G TRANS 2PNP PREBIAS 0.25W SOT363
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