 |  |  | |
| PartNumber | NDDP010N25AZT4H | NDDP010N25AZ-1H | NDDP010N25AZT4H-CUT TAPE |
| Description | MOSFET NCH 10A 250V TP-FA(DPAK) | MOSFET NCH 10A 250V TP(IPAK | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 320 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 16 nC | 16 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Bulk | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 6.5 S | 6.5 S | - |
| Fall Time | 31 ns | 31 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 26 ns | 26 ns | - |
| Factory Pack Quantity | 700 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 44 ns | 44 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Unit Weight | 0.011993 oz | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NDDP010N25AZT4H | MOSFET NCH 10A 250V TP-FA(DPAK) | |
| NDDP010N25AZT4H | IGBT Transistors MOSFET NCH 10A 250V TP-FA(DPAK) | ||
| NDDP010N25AZ-1H | MOSFET N-CH 250V 10A IPAK/TP | ||
| NDDP010N25AZT4H-CUT TAPE | New and Original |