NDD04N60ZT

NDD04N60ZT4 vs NDD04N60ZT4G vs NDD04N60ZT4GJIA

 
PartNumberNDD04N60ZT4NDD04N60ZT4GNDD04N60ZT4GJIA
DescriptionMOSFET N-CH 600V 4.1A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryFETs - SingleFETs - Single-
Series---
PackagingDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging-
Unit Weight0.139332 oz0.139332 oz-
Mounting StyleSMD/SMTSMD/SMT-
Package CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63-
TechnologySiSi-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Mounting TypeSurface MountSurface Mount-
Number of Channels1 Channel1 Channel-
Supplier Device PackageDPAK-3DPAK-3-
ConfigurationSingleSingle-
FET TypeMOSFET N-Channel, Metal OxideMOSFET N-Channel, Metal Oxide-
Power Max83W83W-
Transistor Type1 N-Channel1 N-Channel-
Drain to Source Voltage Vdss600V600V-
Input Capacitance Ciss Vds640pF @ 25V640pF @ 25V-
FET FeatureStandardStandard-
Current Continuous Drain Id 25°C4.1A (Tc)4.1A (Tc)-
Rds On Max Id Vgs2 Ohm @ 2A, 10V2 Ohm @ 2A, 10V-
Vgs th Max Id4.5V @ 50μA4.5V @ 50μA-
Gate Charge Qg Vgs29nC @ 10V29nC @ 10V-
Pd Power Dissipation83 W83 W-
Id Continuous Drain Current4.1 A4.1 A-
Vds Drain Source Breakdown Voltage600 V600 V-
Vgs th Gate Source Threshold Voltage4.5 V4.5 V-
Rds On Drain Source Resistance1.8 Ohms1.8 Ohms-
Transistor PolarityN-ChannelN-Channel-
Qg Gate Charge19 nC19 nC-
Forward Transconductance Min3.3 S3.3 S-
Manufacturer Part # Description RFQ
NDD04N60ZT4 New and Original
ON Semiconductor
ON Semiconductor
NDD04N60ZT4G MOSFET N-CH 600V 4.1A DPAK
NDD04N60ZT4GJIA New and Original
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