NE85639-T

NE85639-T1-A vs NE85639-T1-R27 vs NE85639-T1-R27-A

 
PartNumberNE85639-T1-ANE85639-T1-R27NE85639-T1-R27-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF TRANS NPN 12V 9GHZ SOT143
ManufacturerCEL-CEL
Product CategoryRF Bipolar Transistors-Transistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolar-NPN
TechnologySi--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.1 A--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseMiniMold-4--
PackagingReel-*
Height1.1 mm--
Length2.9 mm--
TypeRF Bipolar Small Signal--
Width1.5 mm--
BrandCEL--
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases2SC4093-T1-A--
Series---
Package Case--*
Mounting Type--*
Supplier Device Package--*
Power Max--200mW
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--12V
DC Current Gain hFE Min Ic Vce--50 @ 20mA, 10V
Frequency Transition--9GHz
Noise Figure dB Typ f--1.1dB @ 1GHz
Gain--13dB
Manufacturer Part # Description RFQ
CEL
CEL
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE85639-T1-R27-A RF TRANS NPN 12V 9GHZ SOT143
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE85639-T1-R27 New and Original
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