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| PartNumber | NESG270034-EV09-AZ | NESG270034-T1-AZ |
| Description | RF Bipolar Transistors For NESG270034-AZ | RF Bipolar Transistors NPN Silicon Med Pwr Transistor |
| Manufacturer | CEL | CEL |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors |
| RoHS | E | E |
| Transistor Type | Bipolar | Bipolar |
| Technology | SiGe | SiGe |
| Emitter Base Voltage VEBO | 2.8 V | 2.8 V |
| Continuous Collector Current | 750 mA | 0.75 A |
| Mounting Style | SMD/SMT | - |
| Type | RF Silicon Germanium | RF Silicon Germanium |
| Brand | CEL | CEL |
| Pd Power Dissipation | 1.9 W | 1900 mW |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors |
| Factory Pack Quantity | 1 | 1000 |
| Subcategory | Transistors | Transistors |
| Transistor Polarity | - | NPN |
| Minimum Operating Temperature | - | - 65 C |
| Maximum Operating Temperature | - | + 150 C |
| Configuration | - | Single |
| Package / Case | - | Power Mini-Mold |
| Packaging | - | Reel |
| Collector Base Voltage VCBO | - | 25 V |
| DC Current Gain hFE Max | - | 80 at 100 mA at 3 V |
| Height | - | 1.5 mm |
| Length | - | 4.5 mm |
| Operating Frequency | - | 900 MHz |
| Width | - | 2.5 mm |