NESG270034-T

NESG270034-T1-AZ vs NESG270034-T1 vs NESG270034-T1-AZ , EM6A9

 
PartNumberNESG270034-T1-AZNESG270034-T1NESG270034-T1-AZ , EM6A9
DescriptionRF Bipolar Transistors NPN Silicon Med Pwr Transistor
ManufacturerCEL--
Product CategoryRF Bipolar Transistors--
RoHSE--
Transistor TypeBipolar--
TechnologySiGe--
Transistor PolarityNPN--
Emitter Base Voltage VEBO2.8 V--
Continuous Collector Current0.75 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Package / CasePower Mini-Mold--
PackagingReel--
Collector Base Voltage VCBO25 V--
DC Current Gain hFE Max80 at 100 mA at 3 V--
Height1.5 mm--
Length4.5 mm--
Operating Frequency900 MHz--
TypeRF Silicon Germanium--
Width2.5 mm--
BrandCEL--
Pd Power Dissipation1900 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
CEL
CEL
NESG270034-T1-AZ RF Bipolar Transistors NPN Silicon Med Pwr Transistor
NESG270034-T1-AZ TRANSISTOR NPN 25V 3-MINI
NESG270034-T1 New and Original
NESG270034-T1-AZ , EM6A9 New and Original
NESG270034-T1-AZ , EM6A9320BIA-4H New and Original
NESG270034-T1-AZTR New and Original
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