NGTB15N60S

NGTB15N60S1EG vs NGTB15N60S vs NGTB15N60S1

 
PartNumberNGTB15N60S1EGNGTB15N60SNGTB15N60S1
DescriptionIGBT Transistors 15A 600V IGBT
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V1.7 V1.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C30 A30 A30 A
Pd Power Dissipation47 W--
SeriesNGTB15N60S1NGTB15N60S1NGTB15N60S1
PackagingTubeTubeTube
BrandON Semiconductor--
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.081130 oz0.081130 oz0.081130 oz
Package Case-TO-220-3TO-220-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-220TO-220
Power Max-117W117W
Reverse Recovery Time trr-270ns270ns
Current Collector Ic Max-30A30A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type-NPTNPT
Current Collector Pulsed Icm-120A120A
Vce on Max Vge Ic-1.7V @ 15V, 15A1.7V @ 15V, 15A
Switching Energy-550μJ (on), 350μJ (off)550μJ (on), 350μJ (off)
Gate Charge-88nC88nC
Td on off 25°C-65ns/170ns65ns/170ns
Test Condition-400V, 15A, 22 Ohm, 15V400V, 15A, 22 Ohm, 15V
Pd Power Dissipation-47 W47 W
Collector Emitter Voltage VCEO Max-600 V600 V
Manufacturer Part # Description RFQ
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
NGTB15N60S New and Original
NGTB15N60S1 New and Original
ON Semiconductor
ON Semiconductor
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
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