| PartNumber | NGTB30N120FL2WG | NGTB30N120IHRWG | NGTB30N120L2WG |
| Description | IGBT Transistors 1200V/30A FAST IGBT FSII | IGBT Transistors 1200V/30A RC IGBT FSII | IGBT Transistors 1200V/30A LOW VCE SAT FSII |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247 | TO-247 | TO-247 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 2 V | 2.2 V | 1.7 V |
| Maximum Gate Emitter Voltage | 30 V | 25 V | 30 V |
| Continuous Collector Current at 25 C | 60 A | 60 A | 60 A |
| Pd Power Dissipation | 452 W | 384 W | 534 W |
| Minimum Operating Temperature | - 55 C | - 40 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | NGTB30N120FL2 | NGTB30N120IHR | NGTB30N120L2 |
| Packaging | Tube | Tube | Tube |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Gate Emitter Leakage Current | 200 nA | 100 nA | 200 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |