NGTB30N120I

NGTB30N120IHRWG vs NGTB30N120IHSWG vs NGTB30N120IHLWG

 
PartNumberNGTB30N120IHRWGNGTB30N120IHSWGNGTB30N120IHLWG
DescriptionIGBT Transistors 1200V/30A RC IGBT FSIIIGBT Transistors 1200/30A IGBT LPT TO-24IGBT Transistors 1200V/30A FS1 IGBT IH
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247TO-247-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.2 V2 V-
Maximum Gate Emitter Voltage25 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation384 W192 W-
Minimum Operating Temperature- 40 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
SeriesNGTB30N120IHRNGTB30N120IHS-
PackagingTubeTube-
BrandON SemiconductorON Semiconductor-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz-
Manufacturer Part # Description RFQ
NGTB30N120IHRWG IGBT Transistors 1200V/30A RC IGBT FSII
ON Semiconductor
ON Semiconductor
NGTB30N120IHSWG IGBT Transistors 1200/30A IGBT LPT TO-24
NGTB30N120IHRWG IGBT Transistors 1200V/30A RC IGBT FSII
NGTB30N120IHLWG IGBT Transistors 1200V/30A FS1 IGBT IH
NGTB30N120IHSWG IGBT Transistors 1200/30A IGBT LPT TO-247
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