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| PartNumber | NGTB50N120FL2WAG | NGTB50N120FL2WG | NGTB50N120FL2WG 50N120F |
| Description | IGBT Transistors 1200V/50 FAST IGBT FSII T | IGBT Transistors 1200V/50A FAST IGBT FSII | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-4 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.8 V | 2.2 V | - |
| Maximum Gate Emitter Voltage | 20 V | 30 V | - |
| Continuous Collector Current at 25 C | 200 A | 100 A | - |
| Pd Power Dissipation | 536 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | NGTB50N120FL2WA | NGTB50N120FL2 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 50 A | - | - |
| Brand | ON Semiconductor | - | - |
| Gate Emitter Leakage Current | 200 nA | 200 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.211644 oz | 0.229281 oz | - |
| Package Case | - | TO-247-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247 | - |
| Power Max | - | 535W | - |
| Reverse Recovery Time trr | - | 256ns | - |
| Current Collector Ic Max | - | 100A | - |
| Voltage Collector Emitter Breakdown Max | - | 1200V | - |
| IGBT Type | - | Trench Field Stop | - |
| Current Collector Pulsed Icm | - | 200A | - |
| Vce on Max Vge Ic | - | 2.2V @ 15V, 50A | - |
| Switching Energy | - | 4.4mJ (on), 1.4mJ (off) | - |
| Gate Charge | - | 311nC | - |
| Td on off 25°C | - | 118ns/282ns | - |
| Test Condition | - | 600V, 50A, 10 Ohm, 15V | - |
| Pd Power Dissipation | - | 535 W | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |