NGTB50N1

NGTB50N120FL2WAG vs NGTB50N120FL2WG vs NGTB50N120FL2WG 50N120F

 
PartNumberNGTB50N120FL2WAGNGTB50N120FL2WGNGTB50N120FL2WG 50N120F
DescriptionIGBT Transistors 1200V/50 FAST IGBT FSII TIGBT Transistors 1200V/50A FAST IGBT FSII
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-4--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.8 V2.2 V-
Maximum Gate Emitter Voltage20 V30 V-
Continuous Collector Current at 25 C200 A100 A-
Pd Power Dissipation536 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesNGTB50N120FL2WANGTB50N120FL2-
PackagingTubeTube-
Continuous Collector Current Ic Max50 A--
BrandON Semiconductor--
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.211644 oz0.229281 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-535W-
Reverse Recovery Time trr-256ns-
Current Collector Ic Max-100A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-200A-
Vce on Max Vge Ic-2.2V @ 15V, 50A-
Switching Energy-4.4mJ (on), 1.4mJ (off)-
Gate Charge-311nC-
Td on off 25°C-118ns/282ns-
Test Condition-600V, 50A, 10 Ohm, 15V-
Pd Power Dissipation-535 W-
Collector Emitter Voltage VCEO Max-1200 V-
Manufacturer Part # Description RFQ
NGTB50N120FL2WAG IGBT Transistors 1200V/50 FAST IGBT FSII T
NGTB50N120FL2WG 50N120FL2 New and Original
NGTB50N120FL2WG 50N120F New and Original
ON Semiconductor
ON Semiconductor
NGTB50N120FL2WG IGBT Transistors 1200V/50A FAST IGBT FSII
NGTB50N120FL2WAG IGBT FIELD STOP 1.2KV TO247-4
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