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| PartNumber | NJV4030PT1G | NJV4030NT3G | NJV4030PT1GONSEMI |
| Description | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 5 A | - | - |
| Gain Bandwidth Product fT | 160 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NJT4030P | - | - |
| DC Current Gain hFE Max | 400 at 1 A, 1 V | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 200 at 1 A, 1 V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |