NP90N04VUG-E

NP90N04VUG-E1-AY vs NP90N04VUG-E1 vs NP90N04VUG-E2-AY

 
PartNumberNP90N04VUG-E1-AYNP90N04VUG-E1NP90N04VUG-E2-AY
DescriptionMOSFET MP-3ZP PoTr-MOSFET Low
ManufacturerRenesas Electronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge90 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation105 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandRenesas Electronics--
Forward Transconductance Min51 S--
Fall Time11 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time32 ns--
Unit Weight0.011993 oz--
Manufacturer Part # Description RFQ
Renesas Electronics
Renesas Electronics
NP90N04VUG-E1-AY MOSFET MP-3ZP PoTr-MOSFET Low
NP90N04VUG-E1 New and Original
NP90N04VUG-E1-AY MOSFET N-CH TO-252
NP90N04VUG-E2-AY New and Original
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