| PartNumber | NSBA114TDXV6T5G | NSBA114TDXV6T1G |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Configuration | Dual | Dual |
| Transistor Polarity | PNP | PNP |
| Typical Input Resistor | 10 kOhms | 10 kOhms |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-563-6 | SOT-563-6 |
| DC Collector/Base Gain hfe Min | 160 | 160 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Continuous Collector Current | - 0.1 A | - 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA |
| Pd Power Dissipation | 357 mW | 357 mW |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | NSBA114TDXV6 | NSBA114TDXV6 |
| Packaging | Reel | Reel |
| DC Current Gain hFE Max | 160 | 160 |
| Height | 0.55 mm | 0.55 mm |
| Length | 1.6 mm | 1.6 mm |
| Width | 1.2 mm | 1.2 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 4000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000106 oz | 0.000106 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSBA114TDXV6T5G | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | ||
| NSBA114TDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | ||
| NSBA114TDXV6T1G | TRANS 2PNP PREBIAS 0.5W SOT563 | ||
| NSBA114TDXV6T5G | TRANS PREBIAS DUAL PNP SOT563 | ||
ON Semiconductor |
NSBA114TDXV6T5 | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | |
| NSBA114TDXV6T1 | TRANS 2PNP PREBIAS 0.5W SOT563 | ||
| NSBA114TDXV6T5 | TRANS 2PNP PREBIAS 0.5W SOT563 |