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| PartNumber | NSBC114EDXV6T5G | NSBC114EDXV6T1G | NSBC114EDXV6T1 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | TRANS 2NPN PREBIAS 0.5W SOT563 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | Y | - |
| Configuration | Dual | Dual | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 10 kOhms | 10 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | SOT-563-6 | - |
| DC Collector/Base Gain hfe Min | 35 | 35 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 357 mW | 357 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSBC114EDXV6 | NSBC114EDXV6 | - |
| Packaging | Reel | Reel | Cut Tape (CT) |
| DC Current Gain hFE Max | 35 | 35 | - |
| Height | 0.55 mm | 0.55 mm | - |
| Length | 1.6 mm | 1.6 mm | - |
| Width | 1.2 mm | 1.2 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000106 oz | 0.000106 oz | - |
| Maximum DC Collector Current | - | 100 mA | - |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| Power Max | - | - | 500mW |
| Transistor Type | - | - | 2 NPN - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 10k |
| Resistor Emitter Base R2 Ohms | - | - | 10k |
| DC Current Gain hFE Min Ic Vce | - | - | 35 @ 5mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 250mV @ 300μA, 10mA |
| Current Collector Cutoff Max | - | - | 500nA |
| Frequency Transition | - | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NSBC114EDXV6T5G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | |
| NSBC114EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC114EDXV6T1 | TRANS 2NPN PREBIAS 0.5W SOT563 | ||
| NSBC114EDXV6T5G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC114EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | ||
| NSBC114EDXV6T1/7AX | New and Original | ||
| NSBC114EDXV6T1G , FDH411 | New and Original | ||
| NSBC114EDXV6T5G , FDH444 | New and Original | ||
| NSBC114EDXV6T5 | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN |