 |  | | |
| PartNumber | NSS12100XV6T1G | NSS12100XV6T | NSS12100XV6T1G , MAX8531 |
| Description | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 12 V | - | - |
| Collector Base Voltage VCBO | - 12 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 400 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS12100XV6 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 150 | - | - |
| Pd Power Dissipation | 500 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSS12100XV6T1G | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR | ||
| NSS12100XV6T | New and Original | ||
| NSS12100XV6T1G , MAX8531 | New and Original | ||
| NSS12100XV6T1G A2 | New and Original | ||
| NSS12100XV6T1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NSS12100XV6T1G | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR |