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| PartNumber | NSVBC856BM3T5G | NSVBC850CLT1G | NSVBC857BLT3G |
| Description | Bipolar Transistors - BJT SS XSTR PNP | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN | Bipolar Transistors - Pre-Biased SS SOT23 GP XSTR PNP 45V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 65 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 300 mV | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC856 SERIES | BC846ALT1 | - |
| DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | - | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | - | - |
| Pd Power Dissipation | 265 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 8000 | 3000 | 10000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000045 oz | - | - |