| PartNumber | NTD4909NA-35G | NTD4909N-1G | NTD4909N-35G |
| Description | MOSFET NFET DPAK 30V 41A 8 mOhm | MOSFET NFET DPAK 30V 41A 8.0 mOhm | MOSFET NFET DPAK 30V 41A 8.0 mOhm |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-252-3 | TO-252-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 41 A | 41 A | 12.1 A |
| Rds On Drain Source Resistance | 8 mOhms | 12 mOhms | 8 mOhms |
| Configuration | Single | Single | Single |
| Packaging | Tube | - | - |
| Series | NTD4909NA-35G | - | NTD4909N |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 75 | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 2.6 W | 2.6 W |
| Qg Gate Charge | - | - | 17.5 nC |
| Fall Time | - | - | 2.3 ns |
| Rise Time | - | - | 19 ns |
| Typical Turn Off Delay Time | - | - | 21 ns |
| Typical Turn On Delay Time | - | - | 8 ns |