 |  | | |
| PartNumber | NTHC5513T1G | NTHC5513 | NTHC5513T1/C1X |
| Description | MOSFET 20V +3.9A/-3A Complementary | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.9 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms, 155 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTHC5513 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 3 ns, 27 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 13 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns, 33 ns | - | - |
| Typical Turn On Delay Time | 5 ns, 7 ns | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTHC5513T1G | MOSFET 20V +3.9A/-3A Complementary | ||
| NTHC5513 | New and Original | ||
| NTHC5513T1/C1X | New and Original | ||
| NTHC5513T1G , FLZ20VC | New and Original | ||
| NTHC5531T1G | New and Original | ||
| NTHC5513T1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTHC5513T1 | MOSFET 20V +3.9A/-3A | |
| NTHC5513T1 | MOSFET N/P-CH 20V CHIPFET | ||
| NTHC5513T1G | MOSFET N/P-CH 20V 1206A |