NTHC5513T1

NTHC5513T1G vs NTHC5513T1

 
PartNumberNTHC5513T1GNTHC5513T1
DescriptionMOSFET 20V +3.9A/-3A ComplementaryMOSFET 20V +3.9A/-3A
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYN
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseChipFET-8ChipFET-8
Number of Channels2 Channel2 Channel
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel
Vds Drain Source Breakdown Voltage20 V20 V
Id Continuous Drain Current3.9 A3.9 A
Rds On Drain Source Resistance80 mOhms, 155 mOhms80 mOhms, 155 mOhms
Vgs Gate Source Voltage12 V12 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.1 W1.1 W
ConfigurationDualDual
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.05 mm1.05 mm
Length3.05 mm3.05 mm
ProductMOSFET Small SignalMOSFET Small Signal
SeriesNTHC5513-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel
TypeMOSFETMOSFET
Width1.65 mm1.65 mm
BrandON SemiconductorON Semiconductor
Forward Transconductance Min6 S6 S
Fall Time3 ns, 27 ns3 ns, 27 ns
Product TypeMOSFETMOSFET
Rise Time9 ns, 13 ns9 ns, 13 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time10 ns, 33 ns10 ns, 33 ns
Typical Turn On Delay Time5 ns, 7 ns5 ns, 7 ns
Unit Weight0.002998 oz0.002998 oz
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTHC5513T1G MOSFET 20V +3.9A/-3A Complementary
NTHC5513T1 MOSFET 20V +3.9A/-3A
NTHC5513T1 MOSFET N/P-CH 20V CHIPFET
NTHC5513T1G MOSFET N/P-CH 20V 1206A
NTHC5513T1/C1X New and Original
NTHC5513T1G , FLZ20VC New and Original
NTHC5513T1G-CUT TAPE New and Original
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