NTHD3100C

NTHD3100CT1G vs NTHD3100CT3 vs NTHD3100CT1

 
PartNumberNTHD3100CT1GNTHD3100CT3NTHD3100CT1
DescriptionMOSFET 20V +3.9A/-4.4A ComplementaryMOSFET 20V +3.9A/-4.4AMOSFET N/P-CH 20V CHIPFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseChipFET-8ChipFET-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.9 A, 3.2 A3.9 A-
Rds On Drain Source Resistance80 mOhms, 110 mOhms--
Vgs th Gate Source Threshold Voltage600 mV, 450 mV--
Vgs Gate Source Voltage4.5 V, - 2.5 V12 V, 8 V-
Qg Gate Charge2.3 nC, 7.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.1 W1.1 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTHD3100C--
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
TypeMOSFETMOSFET-
Width1.65 mm--
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min6 S, 8 S6 S, 8 S-
Fall Time1.5 ns, 12.4 ns10.7 ns, 11.7 ns-
Product TypeMOSFETMOSFET-
Rise Time10.7 ns, 11.7 ns10.7 ns, 11.7 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time9.6 ns, 16 ns9.6 ns, 16 ns-
Typical Turn On Delay Time6.3 ns, 5.8 ns6.3 ns, 5.8 ns-
Unit Weight0.002998 oz0.002998 oz-
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTHD3100CT1G MOSFET 20V +3.9A/-4.4A Complementary
NTHD3100CT3 MOSFET 20V +3.9A/-4.4A
NTHD3100CT3G MOSFET 20V +3.9A/-4.4A Complementary
NTHD3100CT1 MOSFET N/P-CH 20V CHIPFET
NTHD3100CT1G MOSFET N/P-CH 20V CHIPFET
NTHD3100CT3 MOSFET N/P-CH 20V CHIPFET
NTHD3100CT3G MOSFET N/P-CH 20V CHIPFET
NTHD3100C New and Original
NTHD3100CT1G (C9) New and Original
NTHD3100CT1G-CUT TAPE New and Original
Top