 |  | | |
| PartNumber | NTHD3102CT1G | NTHD3102C | NTHD3102CT1G , FLZ24VC |
| Description | MOSFET 20V 5.5A/-4.2A Complementary | ||
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.5 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms, 80 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 600 mW | - | - |
| Configuration | Dual | N-Channel P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTHD3102C | NTHD3102C | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 7.7 S, 5.9 S | - | - |
| Fall Time | 15.9 ns, 16.9 ns | 15.9 ns 16.9 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15.9 ns, 16.9 ns | 15.9 ns 16.9 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.4 ns, 15.7 ns | 16.4 ns 15.7 ns | - |
| Typical Turn On Delay Time | 7.2 ns, 6.4 ns | 7.2 ns 6.4 ns | - |
| Unit Weight | 0.002998 oz | 0.002998 oz | - |
| Package Case | - | 8-SMD, Flat Lead | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | ChipFET | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 1.1W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 510pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4A, 3.1A | - |
| Rds On Max Id Vgs | - | 45 mOhm @ 4.4A, 4.5V | - |
| Vgs th Max Id | - | 1.2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 7.9nC @ 4.5V | - |
| Pd Power Dissipation | - | 600 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 5.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 45 mOhms 80 mOhms | - |
| Forward Transconductance Min | - | 7.7 S 5.9 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTHD3102CT1G | MOSFET 20V 5.5A/-4.2A Complementary | ||
| NTHD3102C | New and Original | ||
| NTHD3102CT1G , FLZ24VC | New and Original | ||
| NTHD3102CT1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTHD3102CT1G | MOSFET N/P-CH 20V 4A/3.1A 1206A |