NTHD4102P

NTHD4102PT1G vs NTHD4102P vs NTHD4102PT3G

 
PartNumberNTHD4102PT1GNTHD4102PNTHD4102PT3G
DescriptionMOSFET -20V -4.1A Dual P-ChannelMOSFET 2P-CH 20V 2.9A CHIPFET
ManufacturerON SemiconductorONON Semiconductor
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation600 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR) Alternate Packaging
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD4102P--
Transistor Type2 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min7 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.002998 oz--
Package Case--8-SMD, Flat Lead
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--ChipFET
FET Type--2 P-Channel (Dual)
Power Max--1.1W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--750pF @ 16V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.9A
Rds On Max Id Vgs--80 mOhm @ 2.9A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--8.6nC @ 4.5V
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTHD4102PT1G MOSFET -20V -4.1A Dual P-Channel
NTHD4102PT1G New and Original
NTHD4102PT3G MOSFET 2P-CH 20V 2.9A CHIPFET
NTHD4102P New and Original
NTHD4102PT1G(C7K New and Original
NTHD4102PT1G-CUT TAPE New and Original
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