NTHS210

NTHS2101PT1G vs NTHS2101P vs NTHS2101PT1

 
PartNumberNTHS2101PT1GNTHS2101PNTHS2101PT1
DescriptionMOSFET -8V -7.5A P-ChannelMOSFET P-CH 8V 5.4A CHIPFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage8 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance34 mOhms--
Vgs Gate Source Voltage8 V--
Pd Power Dissipation1.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min20 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time28 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time73 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.002998 oz--
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTHS2101PT1G MOSFET -8V -7.5A P-Channel
NTHS2101PT1 MOSFET P-CH 8V 5.4A CHIPFET
NTHS2101PT1G MOSFET P-CH 8V 5.4A CHIPFET
NTHS2101P New and Original
NTHS2102PT1G New and Original
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